Joining of silicon carbide and graphite by spark plasma sintering

被引：35

作者：

Okuni, Tomoyuki ^{[1
,2
]}

Miyamoto, Yoshinari ^{[1
,2
]}

Abe, Hiroya ^{[2
]}

Naito, Makio ^{[2
]}

机构：

[1] Toyo Tanso Co Ltd, Adv Carbon Technol Ctr, Nishiyodogawa Ku, Osaka 5550011, Japan

[2] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan

来源：

CERAMICS INTERNATIONAL | 2014年 / 40卷 / 01期

关键词：

Joining; Graphite; Silicon carbide; Spark plasma sintering; GRAPHITIZATION; CARBON;

D O I：

10.1016/j.ceramint.2013.07.017

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

After placing SiC powder on an isotropic graphite substrate, the two materials were successfully joined by spark plasma sintering (SPS). The effect of an Al2O3-Y2O3 sintering aid on SiC during joining was studied. The tensile strength of the joints prepared at 1800 degrees C under 30 MPa for 5 min reached 18 MPa. The fracture occurred not at the interface, but at the graphite substrate. The joining mechanism of SiC/graphite is attributed to the following: after the SiC powder squeezes into the open pores of graphite during sintering, the sintered SiC produces a strong bond through the interface between SIC and graphite. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：1359 / 1363

页数：5

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