Effects of sulfur substitution for oxygen on the thermoelectric properties of Bi2O2Se

被引：24

作者：

Pan, Lin ^{[1
,2
]}

Zhao, Zicheng ^{[1
,2
]}

Yang, Nannan ^{[1
]}

Xing, Wanli ^{[1
]}

Zhang, Jieyun ^{[1
]}

Liu, Yunfei ^{[1
]}

Chen, Changchun ^{[1
]}

Li, Dongxu ^{[1
]}

Wang, Yifeng ^{[1
,2
]}

机构：

[1] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China

[2] Nanjing Tech Univ, Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct, Nanjing 210009, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2020年 / 40卷 / 15期

基金：

中国国家自然科学基金;

关键词：

Thermoelectric; Bi2O2Se; S-doping; Grain size; Electrical conductivity; N-TYPE BI2O2SE; PERFORMANCE; CERAMICS; ENHANCEMENT;

D O I：

10.1016/j.jeurceramsoc.2020.07.047

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present work, the thermoelectric properties of S-doped Bi2O2-xSxSe at the temperatures from 320 to 793 K have been studied. The results show that the solubility limit of S is around x = 0.01 and S-doping is helpful to the sintering and grain growth of Bi2O2Se. Moreover, S-doping reduces the band gap of Bi2O2-xSxSe remarkably as x rises. As a result, a thousand times promotion of electrical conductivity at x = 0.02 is obtained, leading to a nearly 3 times increase of power factor at 787 K. By virtue of the intrinsically low thermal conductivity, a peak ZT of 0.29 at 793 K with an average of 0.21 has been achieved for Bi2O1.98S0.02Se, which is nearly 3 and 6 times larger than that of the pristine one. This study indicates that a small amount of S substitution for O could improve the thermoelectric properties of Bi2O2Se effectively.

引用

页码：5543 / 5548

页数：6

共 21 条

[1] THERMOPOWER IN CORRELATED HOPPING REGIME [J].

CHAIKIN, PM ;

BENI, G .

PHYSICAL REVIEW B, 1976, 13 (02) :647-651

[2]

Chen C., 2015, SCI ADV, V4, P1418

[3] OBSERVATION OF ANDERSON LOCALIZATION IN AN ELECTRON GAS [J].

CUTLER, M ;

MOTT, NF .

PHYSICAL REVIEW, 1969, 181 (03) :1336-&

[4] Roughness scattering induced insulator-metal-insulator transition in a quantum wire [J].

Fu, Han ;

Sammon, M. ;

Shklovskii, B. I. .

PHYSICAL REVIEW B, 2018, 97 (03)

[5] Advances in thermoelectric materials research: Looking back and moving forward [J].

He, Jian ;

Tritt, Terry M. .

SCIENCE, 2017, 357 (6358)

[6] Enhancement of thermoelectric efficiency in PbTe by distortion of the electronic density of states [J].

Heremans, Joseph P. ;

Jovovic, Vladimir ;

Toberer, Eric S. ;

Saramat, Ali ;

Kurosaki, Ken ;

Charoenphakdee, Anek ;

Yamanaka, Shinsuke ;

Snyder, G. Jeffrey .

SCIENCE, 2008, 321 (5888) :554-557

[7] Carrier concentration optimization for thermoelectric performance enhancement in n-type Bi2O2Se [J].

Liu, Rui ;

Lan, Jin-le ;

Tan, Xing ;

Liu, Yao-chun ;

Ren, Guang-kun ;

Liu, Chan ;

Zhou, Zhi-fang ;

Nan, Ce-wen ;

Lin, Yuan-hua .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2018, 38 (07) :2742-2746

[8] Synergistic effect approaching record-high figure of merit in the shear exfoliated n-type Bi2O2-2xTe2xSe [J].

Pan, Lin ;

Liu, Wei-Di ;

Zhang, Jie-Yun ;

Shi, Xiao-Lei ;

Gao, Han ;

Liu, Qing-feng ;

Shen, Xiaodong ;

Lu, Chunhua ;

Wang, Yi-Feng ;

Chen, Zhi-Gang .

NANO ENERGY, 2020, 69

[9] Enhanced thermoelectric properties of highly textured Bi2O2-xSe1+x with liquid-phase mechanical exfoliation [J].

Pan, Lin ;

Zhang, Jieyun ;

Chen, Changchun ;

Wang, Yifeng .

SCRIPTA MATERIALIA, 2020, 178 :376-381

[10] Significant Optimization of Electron-Phonon Transport of n-Type Bi2O2Se by Mechanical Manipulation of Se Vacancies via Shear Exfoliation [J].

Pan, Lin ;

Zhao, Lei ;

Zhang, Xiaoxuan ;

Chen, Changchun ;

Yao, Pingping ;

Jiang, Changlong ;

Shen, Xiaodong ;

Lyu, Yinong ;

Lu, Chunhua ;

Zhao, Li-Dong ;

Wang, Yifeng .

ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (24) :21603-21609

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