Improving the Charge Transport in Self-Assembled Monolayer Field-Effect Transistors: From Theory to Devices

被引:65
作者
Jaeger, Christof M. [1 ,2 ]
Schmaltz, Thomas [4 ]
Novak, Michael [4 ]
Khassanov, Artoem [4 ]
Vorobiev, Alexei [5 ]
Hennemann, Matthias [1 ,2 ]
Krause, Andreas [1 ,2 ]
Dietrich, Hanno [3 ]
Zahn, Dirk [3 ]
Hirsch, Andreas [6 ]
Halik, Marcus [4 ]
Clark, Timothy [1 ,2 ]
机构
[1] Univ Erlangen Nurnberg, Comp Chem Ctr, D-91052 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Interdisciplinary Ctr Mol Mat, D-91052 Erlangen, Germany
[3] Univ Erlangen Nurnberg, Chair Theoret Chem, D-91052 Erlangen, Germany
[4] Univ Erlangen Nurnberg, Inst Polymer Mat, Dept Mat Sci, D-91058 Erlangen, Germany
[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[6] Univ Erlangen Nurnberg, Chair Organ Chem 2, D-91054 Erlangen, Germany
关键词
ORGANIC TRANSISTORS; THRESHOLD VOLTAGE; MOBILITY; DIELECTRICS; OXIDES; LENGTH; MODEL; GOLD;
D O I
10.1021/ja401320n
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A three-pronged approach has been used to design rational improvements in self-assembled monolayer field-effect transistors: classical molecular dynamics (MD) simulations to investigate atomistic structure, large-scale quantum mechanical (QM) calculations for electronic properties, and device fabrication and characterization as the ultimate goal. The MD simulations reveal the effect of using two-component monolayers to achieve intact dielectric insulating layers and a well-defined semiconductor channel. The QM calculations identify improved conduction paths in the monolayers that consist of an optimum mixing ratio of the components. These results have been used both to confirm the predictions of the calculations and to optimize real devices. Monolayers were characterized with X-ray reflectivity measurements and by electronic characterization of complete devices.
引用
收藏
页码:4893 / 4900
页数:8
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