Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors

被引：2

作者：

Shin, Mincheol ^{[1
]}

Lee, Jaehyun ^{[1
]}

Ahn, Chiyui ^{[1
]}

机构：

[1] Informat & Commun Univ, Sch Engn, Taejon 305732, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 10期

关键词：

Carbon Nanotube; Field Effect Transistors; Device Simulation; Non-Equilibrium Green's Function;

D O I：

10.1166/jnn.2008.1437

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Device simulations on three-dimensional top-gated carbon nanotube field effect transistors (CNTFETs) have been performed by considering the quantum transport described in the framework of non-equilibrium Green's function method. Device characteristics of various top-gated CNTFETs, such as Schottky-barrier CNTFETs, CNTFETs with doped source and drain, and tunnel-FET-like CNTFETs, have been examined, focusing on their scaling behavior as the channel length is ultimately reduced down to a few nanometers. Comparison with coaxially-gated devices is also made.

引用

页码：5389 / 5392

页数：4

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