Comparative high power conversion efficiency of C- plus L-band EDFA

被引：11
作者：
Hwang, S
Song, KW
Song, KU
Park, SH
Nilsson, J
Cho, K
机构：
[1] Samsung Elect, Dept Opt Network, R&D Grp, Kyonggi Do 440600, South Korea
[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
[3] Sogang Univ, Dept Phys, Mapo Gu, Seoul 121742, South Korea
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 25期
关键词：
D O I：
10.1049/el:20011014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-band erbium-doped fibre amplifier (EDFA) with high power conversion efficiency is proposed and demonstrated. The EDFA covers both the C-band a-round 1.55 mum and the L-band around 1.58 mum. The same signal gain can be achieved with 42% less pump power and 47% shorter erbium-doped fibre length compared to alternative, conventional parallel type, dual-band EDFAs.
引用
收藏
页码：1539 / 1541
页数：3
相关论文
共 5 条
[1]   WDM EDFA gain characterization with a reduced set of saturating channels [J].
Baney, DM ;
Stimple, J .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (12) :1615-1617
[2]  
LOWE D, 2000, P EUR C OPT COMM MUN
[3]   LOW-NOISE OPERATION OF ER3+ DOPED SILICA FIBER AMPLIFIER AROUND 1.6-MU-M [J].
MASSICOTT, JF ;
WYATT, R ;
AINSLIE, BJ .
ELECTRONICS LETTERS, 1992, 28 (20) :1924-1925
[4]   Long-wavelength erbium-doped fiber amplifier gain enhanced by ASE end-reflectors [J].
Nilsson, J ;
Yun, SY ;
Hwang, ST ;
Kim, JM ;
Kim, SJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (11) :1551-1553
[5]   Broadband and gain-flattened amplifier composed of a 1.55 mu m-band and a 1.58 mu m-band Er3+-doped fibre amplifier in a parallel configuration [J].
Yamada, M ;
Ono, H ;
Kanamori, T ;
Sudo, S ;
Ohishi, Y .
ELECTRONICS LETTERS, 1997, 33 (08) :710-711
1