Monolithically integrated dual-wavelength self-sustained pulsating laser diodes with real refractive index guided self-aligned structure

被引:4
作者
Onishi, T
Imafuji, O
Fukuhisa, T
Mochida, A
Kobayashi, Y
Yuri, M
Itoh, K
Shimizu, H
机构
[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Devices Res Ctr, Kyoto 6178520, Japan
[2] Matsushita Elect Ind Co Ltd, Semicond Co, Discrete Device Div, Kyoto 6178520, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 11期
关键词
780-nm-band lasers; 650-nm-band lasers; monolithic integration; RISA structure; saturable absorbing layer; self-sustained pulsation;
D O I
10.1143/JJAP.40.6401
中图分类号
O59 [应用物理学];
学科分类号
摘要
Monolithically integrated 780-nm-band and 650-nm-band self-sustained pulsating (SSP) lasers, which are desirable for simplified optical pickups in digital versatile disk (DVD) systems, have been developed for the first time. The real refractive index guided self-aligned (RISA) waveguide structure is adapted to reduce absorption loss in the current blocking layers. In order to obtain stable SSP, a saturable absorber formed in the active layer outside the current stripe, and a saturable absorbing layer above the active layer are utilized for the 780-nm-band and 650-nm-band laser diodes (LDs), respectively. Relative intensity noise less than -130 dB/Hz is maintained at temperatures of up to 80 degreesC at an output power of 7 mW for the 650 nm band and 10 mW for the 780 nm band, which suggests that stable SSP operations have been realized.
引用
收藏
页码:6401 / 6405
页数:5
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