Analytic breakdown modeling for GaAs Schottky diodes

被引：0
|
作者：
Park, IY [1 ]
Choi, YI [1 ]
机构：
[1] Ajou Univ, Sch Elect Engn, Suwon 442749, South Korea
来源：
PHYSICA SCRIPTA | 1999年 / T79卷
关键词：
D O I：
10.1238/Physica.Topical.079a00314
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Analytic equations for the breakdown voltage of non-reachthrough and reachthrough GaAs Schottky diodes have been derived by employing two effective ionization coefficients, gamma(2), gamma(2) for corresponding electric fields. Breakdown equations for the low- and high-concentration regions are successfully derived to have closed-forms that exhibit good agreement with experimental results.
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收藏
页码：314 / 317
页数：4
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