Preparation of anodic aluminum oxide templates on silicon substrates for growth of ordered nano-dot arrays

被引：20
作者：
Jeong, S. Y. [1 ,2 ]
An, M. C. [1 ]
Cho, Y. S. [1 ]
Kim, D. J. [1 ]
Paek, M. C. [2 ]
Kang, K. Y. [2 ]
机构：
[1] Chungnam Natl Univ, Dept Nano Informat Syst Engn, Taejon 305764, South Korea
[2] Elect & Telecommun Res Inst, Tera Elect Device Team, Taejon 305606, South Korea
来源：
CURRENT APPLIED PHYSICS | 2009年 / 9卷
关键词：
Anodic aluminum oxide; Nano-template; HEXAGONAL PORE ARRAYS; FABRICATION;
D O I：
10.1016/j.cap.2008.08.030
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated anodic aluminum oxide (AAO) templates on silicon substrates for growth of ordered nano-dot arrays. An AAO template having pores of average diameter 60 nm and height 200 nm was successfully prepared by two-step anodic oxidation of an aluminum film on a silicon substrate. Optimum conditions of the process variables such as annealing time of the as-sputtered aluminum, temperature of the electrolyte solution, and the anodic potential have been experimentally determined. We have obtained silicon-wafer scale AAO templates of ordered arrays with easy handling, and have grown GaAs and GaN nano-dot arrays using the templates by MBE. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：S101 / S103
页数：3
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