Optical properties of porous silicon.: Part II:: Fabrication and investigation of multilayer structures

被引:27
作者
Kordás, K
Beke, S
Pap, AE
Uusimäki, A
Leppävuori, S
机构
[1] Oulu Univ, Microelect & Mat Phys Labs, FIN-90014 Oulu, Finland
[2] Oulu Univ, EMPART Res Grp Infotech Oulu, FIN-90014 Oulu, Finland
基金
芬兰科学院;
关键词
porous silicon; photonics; refractive index; Bragg mirror; sensors;
D O I
10.1016/S0925-3467(03)00254-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By knowing the wavelength dependent optical parameters (refractive index n and absorption coefficient alpha) and the obtained thickness of porous silicon (PS) layers when anodizing boron-doped Si wafers, one can design and realize periodic structures by alternating the current density during anodization. Such periodicity in the structure-and thus in optical properties within a film-results in a superlattice, which acts as a Bragg grating. By considering the proper Bragg conditions, the fabrication of optical filter/reflector components can be performed in a simple manner. In this paper, both theoretical and experimental aspects of the fabrication procedure are investigated. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:257 / 260
页数:4
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