Dislocation motion in silicon: The shuffle-glide controversy

被引:81
作者
Duesbery, MS [1 ]
Joos, B [1 ]
机构
[1] UNIV OTTAWA,DEPT PHYS,OTTAWA,ON K1N 6N5,CANADA
关键词
D O I
10.1080/095008396180191
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple explanation, in terms of the dislocation line energy, for the preference for dislocation motion on glide rather than shuffle planes in silicon and other diamond cubic materials is advanced.
引用
收藏
页码:253 / 258
页数:6
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