Light-induced metastable defects in a-Se90X10 (X = Sb, In and Ag) thin films

被引：5

作者：

Kumar, Anjani ^{[1
]}

Kumar, Ashok ^{[1
]}

机构：

[1] Harcourt Butler Technol Inst, Dept Phys, Kanpur 208002, Uttar Pradesh, India

来源：

PHASE TRANSITIONS | 2015年 / 88卷 / 09期

关键词：

light-induced metastable defects; chalcogenide glasses; density of defect states; thermally stimulated currents; STIMULATED CURRENT MEASUREMENTS; AMORPHOUS CHALCOGENIDES; STEADY-STATE; SEMICONDUCTORS; PHOTOCONDUCTIVITY; CONDUCTIVITY; CAPACITANCE; INSULATORS; CURRENTS; SILICON;

D O I：

10.1080/01411594.2015.1031665

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin films of chalcogenide glasses in a binary system of Se90X10 (X = Sb, In and Ag) have been prepared by the vacuum evaporation technique. Thermally stimulated current measurements have been made to find out the trap density in these materials. To study light-induced defects in these materials, white light of intensity 1200 lux is shown on the amorphous films in vacuum for different exposure times. It is observed that the density of traps increases with exposure time, indicating the appearance of light-induced metastable defects in these materials.

引用

页码：939 / 949

页数：11

共 38 条

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