Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices

被引：148

作者：

Sakuraba, Y. ^{[1
]}

Ueda, M. ^{[1
]}

Miura, Y. ^{[2
,3
]}

Sato, K. ^{[1
]}

Bosu, S. ^{[1
]}

Saito, K. ^{[1
]}

Shirai, M. ^{[2
,3
]}

Konno, T. J. ^{[1
]}

Takanashi, K. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, RIEC, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, CSIS, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 25期

关键词：

ROOM-TEMPERATURE;

D O I：

10.1063/1.4772546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully epitaxial Co2FexMn1-xSi(CFMS)/Ag/Co2FexMn1-xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses t(CFMS) were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and t(CFMS) = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772546]

引用

页数：4

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