Indium tin oxide contacts to gallium nitride optoelectronic devices

被引：227

作者：

Margalith, T ^{[1
]}

Buchinsky, O

Cohen, DA

Abare, AC

Hansen, M

DenBaars, SP

Coldren, LA

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.124227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated GaN-based light-emitting diodes using transparent indium tin oxide (ITO) p contacts. ITO-contacted devices required an additional 2 V to drive 10 mA, as compared to similar devices with metal contacts. However, ITO has lower optical absorption at 420 nm (alpha = 664 cm(-1)) than commonly used thin metal films (alpha = 3 x 10(5) cm(-1)). Uniform luminescence was observed in ITO-contacted devices, indicating effective hole injection and current spreading. (C) 1999 American Institute of Physics. [S0003-6951(99)01626-5].

引用

页码：3930 / 3932

页数：3

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