CdTe Diode Detectors with a p-n Junction Fonned by Laser-Induced Doping

被引：0
|
作者：
Gnatyuk, V. A. [1 ]
Aoki, T. [1 ]
Vlasenko, O. I. [2 ]
Levytskyi, S. N. [2 ]
机构：
[1] Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan
[2] Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
2011 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC) | 2011年
关键词：
CRYSTALS; PROGRESS; LIMITS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The procedures of fabrication of X- and gamma-ray CdTe-based diode detectors with a p-n junction formed by laser-induced doping of the surface region of high resistivity p-like crystals in different environments are considered. The use of a relatively thick In dopant film and laser irradiation of In/CdTe structure in liquid allowed to apply higher laser energy densities and multiple irradiation of an In film. Finally, the room temperature In/CdTe/Au diode detectors with extremely high energy resolution have been obtained.
引用
收藏
页码：4506 / 4509
页数：4
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