A relation between an a-Si:H integrated buffer transistor resistance and falling time of gate output signal

被引:1
作者
Kim, Do-Sung
Jo, Sung-Hak
Jeong, Seong-Hun
Nam, Dae-Hyun
Min, Soon-Young
Lee, Kyung-Ha
Shin, Jong-Keun
Chung, In Jae
机构
来源
2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | 2008年 / 39卷
关键词
D O I
10.1889/1.3069373
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In case of using an a-Si:H integrated gate driver for TFT-LCD[1-4], it important to define gate falling time exactly. Because an a-si:H integrated gate driver might degrade with bad environment easily, which result in gate signal delay or decreasing output signal. In other words, a little degradation of a-Si:H gate driver affects the quality of picture. If a little degradation of a-Si:H gate driver under special circumstance is inevitable, it necessary to make a gate driver has so sufficient margin time within one horizontal time that cannot be interfered with next data signal. So, it's necessary to understand what factors affect the a-Si:H integrated gate output signal. Especially, we focused an a effect of buffer transistor resistance for gate output signal. In our study, with a test a-Si:H integrated gate driver pattern and simple simulation process, a relation a-Si:H integrated buffer transistor resistance and gate output signal is analyzed.
引用
收藏
页码:1281 / 1284
页数:4
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