A Generalized Model for Boron-Oxygen Related Light-Induced Degradation in Crystalline Silicon

被引：12

作者：

Herguth, Axel ^{[1
]}

Hallam, Brett ^{[2
]}

机构：

[1] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[2] Univ New South Wales, Sydney, NSW 2052, Australia

来源：

SILICONPV 2018: THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS | 2018年 / 1999卷

基金：

澳大利亚研究理事会;

关键词：

LIFETIME DEGRADATION; HYDROGEN; PASSIVATION; DEFECTS; REGENERATION; KINETICS;

D O I：

10.1063/1.5049325

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The current state-of-knowledge regarding the reaction dynamics behind Boron-Oxygen related Light-Induced Degradation (BO-LID) is reviewed and an updated Generalized Model of BO-LID is presented. The paper includes the key role of carrier injection in causing the degradation mechanism, the multiple precursor states that result in a multi-stage degradation of carrier lifetime, thermal killing of defect precursors, and hydrogen passivation or 'regeneration' of the defects in the presence of hydrogen and carrier injection. In particular, the paper discusses the importance of hydrogen sources, the role of hydrogen-traps such as substitutional boron, and hydrogen charge states for changing the dynamics of the system.

引用

页数：4

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