共 50 条
- [32] (100) VERSUS (111)B CRYSTALLOGRAPHIC ORIENTATION OF HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3133 - 3138
- [33] In situ monitoring of molecular-beam-epitaxy grown Hg1-xCdxTe by Fourier transform infrared spectroscopy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1576 - 1579
- [34] In situ spectroscopic ellipsometry for real time composition control of Hg1-xCdxTe grown by molecular beam epitaxy SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 : 613 - 618
- [35] CHEMICAL BEAM EPITAXY OF HG1-XCDXTE AND RELATED BINARIES PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1994, 29 (1-4): : 161 - 216
- [37] In situ spectroscopic ellipsometry for real time composition control of Hg1-xCdxTe grown by molecular beam epitaxy INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 377 - 382
- [39] Growth and characterization of thin Hg1-xCdxTe epitaxial layers grown from Hg-rich solutions SEMICONDUCTOR DEVICES, 1996, 2733 : 318 - 320