Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

被引:8
作者
Carlin, Conrad Zachary [1 ]
Bradshaw, Geoffrey Keith [1 ]
Samberg, Joshua Paul [2 ]
Colter, Peter C. [1 ]
Bedair, Salah M. [1 ]
机构
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
基金
美国国家科学基金会;
关键词
Indium Gallium Arsenide; quantum wells; tunneling; SOLAR-CELLS; ESCAPE;
D O I
10.1109/TED.2013.2268421
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Minority carrier transport across InGaAs/GaAsP multiple quantum wells is studied by measuring the response of p-i-n and n-i-p GaAs solar cell structures. It is observed that the spectral response depends critically upon the width of the GaAsP barriers and the device polarity. Electron tunneling is not as efficient as hole tunneling due to a higher conduction band barrier. The spectral response depends on the relative magnitude of the carrier lifetime as compared with the tunneling lifetime. This paper deduces an estimated electron lifetime of 110 ns in In0.14Ga0.86 As wells and 25 ns in In-0.17 Ga-0.83 As wells, which agree with published results.
引用
收藏
页码:2532 / 2536
页数:5
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