Influence of manganese doping to the full tensor properties of 0.24Pb(In1/2Nb1/2)O3-0.47Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals

被引：41

作者：

Sun, Enwei ^{[1
]}

Zhang, Rui ^{[1
]}

Wu, Fengmin ^{[1
]}

Yang, Bin ^{[1
]}

Cao, Wenwu ^{[1
,2
]}

机构：

[1] Harbin Inst Technol, Condensed Matter Sci & Technol Inst, Harbin 150080, Peoples R China

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 07期

关键词：

PIEZOELECTRIC PROPERTIES; GROWTH;

D O I：

10.1063/1.4792600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Complete sets of elastic, piezoelectric, dielectric, and electromechanical properties of [001](c) and [011](c) poled pure and 0.5 wt.% manganese-doped 0.24Pb(In1/2Nb1/2)O-3-0.47Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3) single crystals have been characterized at room temperature. The results indicate that manganese ion substitution in the B-site of perovskite 0.24PIN-0.47PMN-0.29PT single crystals makes the material harder with much higher mechanical quality factor Q(m) and slight decrease in piezoelectric and dielectric constants. The much improved Q(m) value (200-900) makes Mn-doped single crystals more suitable for high-power transducer applications than pure single crystals. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792600]

引用

页数：4

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