Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy

被引：146
作者：
Fan, L. L. [1 ]
Chen, S. [1 ]
Wu, Y. F. [1 ]
Chen, F. H. [1 ]
Chu, W. S. [1 ]
Chen, X. [1 ]
Zou, C. W. [1 ]
Wu, Z. Y. [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 13期
基金：
中国国家自然科学基金;
关键词：
METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; STOICHIOMETRY;
D O I：
10.1063/1.4823511
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
VO2 epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al2O3 (0001) substrate. The VO2 film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO2 film is discussed in the framework of the hybridization theory and the valence state of vanadium. (C) 2013 AIP Publishing LLC.
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页数：5
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