Growth of single-crystalline bismuth antimony telluride nanoplates on the surface of nanoparticle thin films

被引:20
作者
Takashiri, Masayuki [1 ]
Tanaka, Saburo [2 ]
Miyazaki, Koji [3 ]
机构
[1] Tokai Univ, Dept Mat Sci, Hiratsuka, Kanagawa 2591292, Japan
[2] Kyushu Inst Technol, Dept Biol Funct & Engn, Wakamatsu Ku, Kitakyushu, Fukuoka 8080196, Japan
[3] Kyushu Inst Technol, Dept Mech & Control Engn, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan
关键词
Crystal morphology; Nanostructures; Surface structure; Semiconducting ternary compounds; FLASH EVAPORATION METHOD; THERMOELECTRIC PERFORMANCE; TOPOLOGICAL INSULATORS; BI2TE3; CONDUCTIVITY; TEMPERATURE; TRANSPORT; DEVICES; SB2TE3; MERIT;
D O I
10.1016/j.jcrysgro.2013.03.028
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have reported the growth of single-crystalline bismuth antimony telluride nanoplates on the surface of nanoparticle thin films using a simple sintering process. We prepared two types of bismuth antimony telluride thin films, one comprising nanoparticles and the other submicron particles. The nanoplates were found to grow only on thin films comprising nanoparticles. The structure, composition, and morphology of nanoplates were investigated by using X-ray diffractometry, scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray analysis. The obtained nanoplates were of length 0.5-1 mu m and thickness less than 100 nm. The atomic composition of the nanoplates was almost the same as that of the nanoparticles in the thin films. The nanoplates were found to be single crystalline, while the nanoparticles in the thin films were polycrystalline in nature. The growth of nanoplates on the surface of the thin films was due to the partial melting and evaporation of nanoparticles during the sintering process. As a result, the evaporated materials formed nuclei on the surface of the films, which then crystallized to form nanoplates. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:199 / 204
页数:6
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