Formation Of Arsenic Rich Silicon Oxide Under Plasma Immersion Ion Implantation And Laser Annealing

被引：5

作者：

Meirer, F. ^{[1
]}

Demenev, E. ^{[1
]}

Giubertoni, D. ^{[1
]}

Gennaro, S. ^{[1
]}

Vanzetti, L. ^{[1
]}

Pepponi, G. ^{[1
]}

Bersani, M. ^{[1
]}

Sahiner, M. A. ^{[2
]}

Steinhauser, G. ^{[3
]}

Foad, M. A. ^{[4
]}

Woicik, J. C. ^{[5
]}

Mehta, A. ^{[6
]}

Pianetta, P. ^{[6
]}

机构：

[1] Fdn Bruno Kessler, Ctr Mat & Microsyst, I-38123 Povo, Trento, Italy

[2] Seton Hall Univ, Dept Phys, S Orange, NJ 07079 USA

[3] Vienna Univ Technol, Inst Atom, A-1020 Vienna, Austria

[4] Appl Mat Inc, Santa Clara, CA 95052 USA

[5] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[6] Stanford Synchrotron Radiat Lightsource, SLAC, Stanford, CA 94025 USA

来源：

ION IMPLANTATION TECHNOLOGY 2012 | 2012年 / 1496卷

关键词：

Arsenic; Silicon; Plasma Immersion Ion Implantation; Laser Annealing; SIMS; EXAFS; XPS; SHALLOW; SI;

D O I：

10.1063/1.4766520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Samples produced by plasma immersion ion implantation of Arsenic in Silicon using a non-pulsed plasma source and subsequent laser annealing were investigated with respect to As depth distribution, oxide thickness, and As local order using SIMS, XPS, INAA and EXAFS analysis. A surface layer (similar to 10 nm), was identified as an As-rich Si oxide formed after implantation. The thickness of this layer was found to be larger for samples annealed using a low thermal budget up to a threshold where probably melting occurred. Dopant depth profile was re-distributed whereas the final oxide film of these samples showed thicknesses of a few nm. The retained As dose exhibited an apparent drastic increase. A hypothesis for the processes involved is presented based on experimental evidence.

引用

页码：183 / 188

页数：6

共 13 条

[1] ANOMALOUS OXIDATION RATE OF SILICON IMPLANTED WITH VERY HIGH-DOSES OF ARSENIC
CHOI, SS
NUMAN, MZ
CHU, WK
IRENE, EA
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1001 - 1003
[2] Recent developments and applications of plasma immersion ion implantation
Chu, PK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 289 - 296
[3] Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon
Demenev, E.
Giubertoni, D.
van den Berg, J.
Reading, M.
Bersani, M.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 273 : 192 - 194
[4] Plasma doping for the fabrication of ultra-shallow junctions
Felch, SB
Fang, Z
Koo, BW
Liebert, RB
Walther, SR
Hacker, D
[J]. SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3) : 229 - 236
[5] Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon
Giubertoni, Damiano
Pepponi, Giancarlo
Gennaro, Salvatore
Bersani, Massimo
Sahiner, Mehmet Alper
Kelty, Stephen P.
Doherty, Roisin
Foad, Majeed A.
Kah, Max
Kirkby, Karen J.
Woicik, Joseph C.
Pianetta, Piero
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
[6] Gupta D., 2011, INT J ADV TECHNOLOGY, V2
[7] IFEFFIT: interactive XAFS analysis and FEFF fitting
Newville, M
[J]. JOURNAL OF SYNCHROTRON RADIATION, 2001, 8 (02) : 322 - 324
[8] Direct Measurements of Self-Sputtering, Swelling, and Deposition Effects of N-Type Low-Energy Ion Implantations
Qin, Shu
Zhuang, Kent
Hu, Yongjun Jeff
McTeer, Allen
Lu, Shifeng
[J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 2009, 37 (10) : 2082 - 2089
[9] SCATTERING-MATRIX FORMULATION OF CURVED-WAVE MULTIPLE-SCATTERING THEORY - APPLICATION TO X-RAY-ABSORPTION FINE-STRUCTURE
REHR, JJ
ALBERS, RC
[J]. PHYSICAL REVIEW B, 1990, 41 (12): : 8139 - 8149
[10] Ab initio calculations for point defect clusters with P, As, and Sb in Si
Sahli, Beat
Vollenweider, Kilian
Fichtner, Wolfgang
[J]. PHYSICAL REVIEW B, 2009, 80 (07)

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