High performance multi-gate pMOSFETs using uniaxially-strained SGOI channels

被引：0

作者：

Irisawa, T ^{[1
]}

Numata, T ^{[1
]}

Tezuka, T ^{[1
]}

Usuda, K ^{[1
]}

Nakaharai, S ^{[1
]}

Hirashita, N ^{[1
]}

Sugiyama, N ^{[1
]}

Toyoda, E ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] MIRAI ASET, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We propose a novel multi-gate CMOS structure having a high mobility channel with optimal strain configuration, realized by appropriately merging globally-strained substrates with lateral strain relaxation technique. We report successful fabrication and operation of uniaxially-strained SGOI Fin and Tri-Gate pMOSFETs. The improved SCE immunity and the performance enhancement are demonstrated.

引用

页码：727 / 730

页数：4

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