Silicon Nanowire Charge-Trap Memory Incorporating Self-Assembled Iron Oxide Quantum Dots

被引：6

作者：

Huang, Ruo-Gu ^{[1
,2
]}

Heath, James R. ^{[1
]}

机构：

[1] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA

[2] Micron Technol Inc, San Jose, CA 95134 USA

来源：

SMALL | 2012年 / 8卷 / 22期

关键词：

Fowler-Nordheim tunneling; semiconductor quantum dots; non-volatile memory devices; silicon nanowires; self-assembly; NONVOLATILE MEMORY; NANOCRYSTAL MEMORY; FLASH MEMORY; DEVICES; LAYER; OPERATION; SONOS; DENSITY;

D O I：

10.1002/smll.201200940

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Charge-trap non-volatile memory devices based upon the precise integration of quantum dot storage elements with silicon nanowire field-effect transistors are described. Template-assisted assembly yields an ordered array of FeO QDs within the trenches that separate highly aligned SiNWs, and injected charges are reversibly stored via Fowler-Nordheim tunneling into the QDs. Stored charges shift the transistor threshold voltages, providing the basis for a memory device. Quantum dot size is found to strongly influence memory performance metrics. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3417 / 3421

页数：5

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