Backscattered electron imaging at low emerging angles: A physical approach to contrast in LVSEM

被引：14

作者：

Cazaux, J. ^{[1
,2
]}

Kuwano, N. ^{[3
]}

Sato, K. ^{[4
]}

机构：

[1] LISM, F-51687 Reims 2, France

[2] Fac Sci, EA 4695, F-51687 Reims 2, France

[3] Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Kuala Lumpur 54100, Malaysia

[4] JFE Steel Corp, Steel Res Lab, Chuo Ku, Chiba 2600835, Japan

来源：

ULTRAMICROSCOPY | 2013年 / 135卷

关键词：

Backscattered electrons; Low Voltage Scanning Electron Microscopy; Work function effects; Surface properties; CHANNELING CONTRAST; SURFACES; MICROSCOPY; DENSITY; SCALE;

D O I：

10.1016/j.ultramic.2013.06.002

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Due to the influence of refraction effects on the escape probability of the Back- Scattered Electrons (BSE), an expression of the fraction of these BSE is given as a function of the beam energy, E degrees, and emission angle (with respect to the normal) a. It has been shown that these effects are very sensitive to a local change of the work function in particular for low emerging angles. This sensitivity suggests a new type of contrast in Low Voltage Scanning Electron Microscopy (LVSEM for E degrees<2 keV): the work function contrast. Involving the change of. with crystalline orientation, this possibility is supported by a new interpretation of a few published images. Some other correlated contrasts are also suggested. These are topographical contrasts or contrasts due to subsurface particles and cracks. Practical considerations of the detection system and its optimization are indicated. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：43 / 49

页数：7

共 34 条

[1]

Aoyama T, 2011, ISIJ INT, V51, P1487, DOI 10.2355/isijinternational.51.1487

[2] Influence of electron refraction effects at surfaces and interfaces in quantitative surface analysis with XPS and AES [J].