Charge Detection in an Array of CMOS Quantum Dots

被引:48
作者
Chanrion, Emmanuel [1 ]
Niegemann, David J. [1 ]
Bertrand, Benoit [2 ]
Spence, Cameron [1 ]
Jadot, Baptiste [1 ]
Li, Jing [3 ]
Mortemousque, Pierre-Andre [2 ]
Hutin, Louis [2 ]
Maurand, Romain [3 ]
Jehl, Xavier [3 ]
Sanquer, Marc [3 ]
Franceschi, Silvano De [3 ]
Bauerle, Christopher [1 ]
Balestro, Franck [1 ]
Niquet, Yann-Michel [3 ]
Vinet, Maud [2 ]
Meunier, Tristan [1 ]
Urdampilleta, Matias [1 ]
机构
[1] Univ Grenoble Alpes, CNRS, Grenoble INP, Inst Neel, F-38402 Grenoble, France
[2] CEA, LETI, Minatec Campus, F-38054 Grenoble, France
[3] Univ Grenoble Alpes, CEA, IRIG, F-38000 Grenoble, France
关键词
NOISE; SPIN;
D O I
10.1103/PhysRevApplied.14.024066
中图分类号
O59 [应用物理学];
学科分类号
摘要
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward a large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenges lies in the detection of charges within the array. It is a prerequisite to initialize a desired charge state and read out spins through spin-to-charge conversion mechanisms. In this work, we use two methods based on either a single-lead charge detector or a reprogrammable single-electron transistor. By these methods, we study the charge dynamics and sensitivity by performing single-shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.
引用
收藏
页数:8
相关论文
共 41 条
[1]   A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation [J].
Department of Solar Energy, Institute of Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover, Germany ;
不详 ;
不详 ;
不详 .
J Appl Phys, 2006, 11
[2]   Rapid Single-Shot Measurement of a Singlet-Triplet Qubit [J].
Barthel, C. ;
Reilly, D. J. ;
Marcus, C. M. ;
Hanson, M. P. ;
Gossard, A. C. .
PHYSICAL REVIEW LETTERS, 2009, 103 (16)
[3]  
Batude P., 2017, IEEE INT EL DEV M IE
[4]   Reconfigurable quadruple quantum dots in a silicon nanowire transistor [J].
Betz, A. C. ;
Tagliaferri, M. L. V. ;
Vinet, M. ;
Brostrom, M. ;
Sanquer, M. ;
Ferguson, A. J. ;
Gonzalez-Zalba, M. F. .
APPLIED PHYSICS LETTERS, 2016, 108 (20)
[5]   Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate Sensors [J].
Colless, J. I. ;
Mahoney, A. C. ;
Hornibrook, J. M. ;
Doherty, A. C. ;
Lu, H. ;
Gossard, A. C. ;
Reilly, D. J. .
PHYSICAL REVIEW LETTERS, 2013, 110 (04)
[6]   Low-frequency charge noise in Si/SiGe quantum dots [J].
Connors, Elliot J. ;
Nelson, J. J. ;
Qiao, Haifeng ;
Edge, Lisa F. ;
Nichol, John M. .
PHYSICAL REVIEW B, 2019, 100 (16)
[7]   Mesoscopic admittance of a double quantum dot [J].
Cottet, Audrey ;
Mora, Christophe ;
Kontos, Takis .
PHYSICAL REVIEW B, 2011, 83 (12)
[8]   Nagaoka ferromagnetism observed in a quantum dot plaquette [J].
Dehollain, J. P. ;
Mukhopadhyay, U. ;
Michal, V. P. ;
Wang, Y. ;
Wunsch, B. ;
Reichl, C. ;
Wegscheider, W. ;
Rudner, M. S. ;
Demler, E. ;
Vandersypen, L. M. K. .
NATURE, 2020, 579 (7800) :528-533
[9]   ENERGY SCALES FOR NOISE PROCESSES IN METALS [J].
DUTTA, P ;
DIMON, P ;
HORN, PM .
PHYSICAL REVIEW LETTERS, 1979, 43 (09) :646-649
[10]  
Elzerman JM, 2004, NATURE, V430, P431, DOI [10.1038/nature02693, 10.1039/nature02693]