High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

被引：14

作者：

Suzuki, Yuichiro ^{[1
]}

Ogiwara, Shimpei ^{[1
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 20期

关键词：

annealing; liquid phase epitaxial growth; MOSFET; silicon compounds; RAPID MELT GROWTH; MOSFETS; WAFERS; SI;

D O I：

10.1063/1.4766917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NHigh-mobility p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GOI) structures formed by lateral liquid-phase epitaxy (LLPE) from the Si seed areas. It was found that appropriate rapid annealing conditions for LLPE effectively suppress intermixing at the Si seed regions and produce tensile strained single-crystalline Ge layers surrounded by SiO2 microcrucibles. We examined the electrical properties of the thin Ge layers using GOI MOSFETs with back-gate control in the p-type accumulation mode. Excellent transistor performance, such as a low off-leakage current of 1 X 10(-7) mu A/mu m, a high on/off current ratio of 10(6), and high low-field hole mobility of 480 cm(2)/Vs, which is 2.8 times higher than that of the reference silicon-on-insulator device, was demonstrated, indicating that the LLPE method provides high-quality local GOI structures and that it is a feasible way to fabricate the next-generation Ge-based devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766917]

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