Giant magnetoresistance behaviour in in-situ La0.60Sr0.40MnO3 films grown on Si substrates by pulsed laser deposition

被引：28

作者：

Zhang, W

Boyd, IW

Cohen, NS

Bui, QT

Pankhaurst, QA

机构：

[1] UNIV LONDON UNIV COLL, DEPT ELECT & ELECT ENGN, LONDON WC1E 7JE, ENGLAND

[2] UNIV LONDON UNIV COLL, DEPT PHYS & ASTRON, LONDON WC1E 6BT, ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1997年 / 109卷

关键词：

D O I：

10.1016/S0169-4332(96)00673-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the synthesis and giant magnetoresistance characteristics of as-deposited La0.60Sr0.40MnO3 films on Si(100) substrates by pulsed laser deposition (PLD). The deposited films exhibit a pervoskite-cubic structure with (110) orientation. Giant magnetoresistance behaviour, with mon than 37% change in resistivity (Delta rho/rho(0)=rho(0)-rho(H)/rho(0)), was obtained at room temperature under a magnetic field of 12 T. The giant magnetoresistance observed in our in-situ La0.60Sr0.40MnO3 films can be explained by the ferromagnetic phase transition and magnetic polaron behaviour.

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页码：350 / 353

页数：4

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