High resolution x-ray spectroscopy using GaAs arrays

被引:47
作者
Owens, A
Bavdaz, M
Peacock, A
Poelaert, A
Andersson, H
Nenonen, S
Sipila, H
Tröger, L
Bertuccio, G
机构
[1] European Space Agcy, Estec, Dept Space Sci, NL-2200 AG Noordwijk, Netherlands
[2] Metorex Int Oy, FIN-02630 Espoo, Finland
[3] DESY, HASYLAB, D-22607 Hamburg, Germany
[4] Politecn Milan, Dept Elect Engn & Informat Engn, I-20133 Milan, Italy
关键词
D O I
10.1063/1.1406546
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have produced a number of small format gallium arsenide (GaAs) arrays to address the material, electronic, and technological problems that need to be solved in order to develop mega pixel, Fano-limited spectroscopic x-ray imagers. Results will be presented of a series of x-ray measurements carried out on a prototype 5x5 array, fabricated from 40 mum thick epitaxial GaAs. The device has pixel sizes of 200x200 mum(2) and pitch 250 mum. As a preliminary investigation of performance, two pixels have been instrumented. Measurements from 5.9 to 98 keV were carried out both in our laboratory and at the Hamburger Synchrotronstrahlungslabor research facility in Hamburg, Germany. Both pixels were found to be remarkably uniform, both in their spectral and spatial response to x-rays. The average nonlinearity in the spectral response is <1% across the energy range 5.9-98 keV. Using a 12 keV, 20x20 mum(2) pencil beam, the spatial uniformity was found to be better than 98% over the entire pixel surfaces, consistent with the statistical precision of the measurement. The energy resolution at -40 degreesC is 400 eV full width at half maximum (FWHM) at 5.9 keV rising to 700 eV FWHM at 98 keV. No difference in energy resolution was found between full area and pencil beam illumination. An analysis of the resolution function has shown that the detector is dominated by electronic noise at low energies and Fano noise at energies above 30 keV. By best-fitting the expected resolution function to the entire data set, we derive a Fano factor of 0.140 +/-0.05, together with a charge transport factor as low as 1.4x10(-3). Further improvement in the resolution function has been achieved by replacing the conventional resistive feedback preamplifiers with a new resistorless design, which provides a lower component of electronic noise. In this case, a resolution of 266 eV FWHM at 5.9 keV has been achieved at room temperature (23 degreesC) and 219 eV FWHM with only modest cooling (-31 degreesC). The expected Fano noise at this energy is similar to 140 eV. (C) 2001 American Institute of Physics.
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页码:5376 / 5381
页数:6
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