Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET

被引：7

作者：

de Souza Fino, Leonardo Navarenho ^{[1
]}

Neto, Enrico Davini ^{[1
]}

Guazzelli da Silveira, Marcilei Aparecida ^{[2
]}

Renaux, Christian ^{[3
]}

Flandre, Denis ^{[3
]}

Gimenez, Salvador Pinillos ^{[1
]}

机构：

[1] Ctr Univ Fei Elect Engn, Sao Bernardo Do Campo, Brazil

[2] Ctr Univ Fei Phys, Sao Bernardo Do Campo, Brazil

[3] Univ Catholique Louvain ICTEAM ELEN, Louvain, Belgium

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 10期

基金：

巴西圣保罗研究基金会;

关键词：

octagonal layout style; integrated smart power dc/dc converter; longitudinal corner effect; low cost SOI; deactivate the parasitic MOSFET in the bird's beak regions effect-DEPAMBBRE; OXIDE; DEGRADATION; VOLTAGE; DESIGN; FINFET; RATIO;

D O I：

10.1088/0268-1242/30/10/105024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) manufactured with octagonal gate geometry and the standard counterpart. Our main focus is on integrated transceivers for wireless communications and smart-power dc/dc converters for mobile electronics, where the transistor is used as the key switching element. It is shown that this innovative layout can reduce the total ionizing dose (TID) effects due to the special characteristics of the OCTO SOI MOSFET bird's beak regions, where longitudinal electrical field lines in these regions are not parallel to the drain and source regions. Consequently, the parasitic MOSFETs associated with these regions are practically deactivated.

引用

页数：12

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