Temperature dependence of thermoelectric properties in V2O5 thin film

被引：0
作者：
Kang, Manil [1 ]
Kim, Sok Won [1 ]
Ryu, Ji-Wook [2 ]
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Kongju Natl Univ, Dept Phys, Kong Ju 314701, South Korea
来源：
HIGH TEMPERATURES-HIGH PRESSURES | 2016年 / 45卷 / 5-6期
关键词：
V2O5; metal-to-insulator transition; thermoelectric properties; Seebeck coefficient; power factor; resistivity; MOTT TRANSITION; CAPACITY; DEVICES;
D O I：
暂无
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
In order to investigate the temperature dependence of thermophysical properties in crystalline V2O5 thin film, we measure the Seebeck coefficient and the electrical conductivity, and examine the thermoelectric behavior of the film near the transition temperature (T-c). Based on X-ray diffraction (XRD) results, lattice distortion induced by oxygen vacancy formation is observed above 598 K, and the phase transformation develops at 773 K. The crystalline V2O5 film reveals n-type conduction, and the decreasing trend in the Seebeck coefficient underwent a change above 513 K. The film's resistivity and Seebeck coefficient exhibit an insulating or semiconducting state below 513 K, and these behaviors change above 513 K. The power factor (PF) changed significantly with a striking peak at 573 K. This result is due to the changes in resistivity and the Seebeck coefficient near Tc. Our results suggest that the metal-insulator transition (MIT) in V2O5 film is not caused by phase transformation due to the excessive emission of oxygen. Based on our results, we suggest that the MIT in V2O5 film occurs due to lattice distortion induced by the formation of vanadyl-oxygen vacancies.
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页码：415 / 423
页数：9
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