Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

被引：3
|
作者：
Nipoti, R. [1 ]
Nath, A. [2 ,3 ]
Tian, Y-L. [4 ]
Tamarri, F. [1 ]
Moscatelli, F. [1 ]
De Nicola, P.
Rao, Mulpuri V. [2 ,3 ]
机构：
[1] CNR IMM Bologna, Via Gobetti 101, I-40129 Bologna, Italy
[2] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA
[3] LT Technol, Fairfax, VA 22033 USA
[4] Lab Micro & Submicro Enabling Technol Emilia Roma, I-40129 Bologna, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
ion implantation; microwave annealing; p-i-n diodes; HPSI; 4H-SiC;
D O I：
10.4028/www.scientific.net/MSF.717-720.985
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The fabrication of a fully ion-implanted and microwave annealed vertical p-i-n diode using high purity semi-insulating 4H-SiC substrate has been demonstrated for the first time. The thickness of the intrinsic region is the wafer thickness 350 mu m. The anode and cathode of the diode have been doped with Al and P, respectively, to concentrations of few times 10(20) cm(-3) by ion implantation. The post implantation annealing has been performed by microwave heating the samples up to 2100 degrees C.
引用
收藏
页码：985 / +
页数：2
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