Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations

被引：19

作者：

Chen, Qu ^{[1
]}

Robertson, Alex W. ^{[1
]}

He, Kuang ^{[1
]}

Gong, Chuncheng ^{[1
]}

Yoon, Euijoon ^{[2
]}

Lee, Gun-Do ^{[2
]}

Warner, Jamie H. ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

ACS NANO | 2015年 / 9卷 / 08期

基金：

新加坡国家研究基金会; 英国工程与自然科学研究理事会;

关键词：

graphene; defects divacancy; TEM; aberration correction; DFT; ELECTRON-MICROSCOPY; POINT-DEFECTS; NANOSCALE;

D O I：

10.1021/acsnano.5b03801

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Vacancy defects play an important role in influencing the properties of graphene, and understanding their detailed atomic structure is crucial for developing accurate models to predict their impact. Divacancies (DVs) are one of the most common defects in graphene and can take three different structural forms through various sequences of bond rotations to minimize the energy. Using aberration-corrected transmission electron microscopy with monochromation of the electron source, we resolve the position of C atoms in graphene and measure the C-C bond lengths within the three DVs, enabling a map of bond strain to be generated. We show that bond rotations reduce the maximum single bond strain reached within a DV and help distribute the strain over a larger number of bonds to minimize the peak magnitude.

引用

页码：8599 / 8608

页数：10

共 31 条

[1] Graphene-like nano-sheets for surface acoustic wave gas sensor applications [J].