Large thermoelectric figure of merit at high temperature in Czochralski-grown clathrate Ba8Ga16Ge30 -: art. no. 023708

被引：360

作者：

Saramat, A ^{[1
]}

Svensson, G

Palmqvist, AEC

Stiewe, C

Mueller, E

Platzek, D

Williams, SGK

Rowe, DM

Bryan, JD

Stucky, GD

机构：

[1] Chalmers Univ Technol, Dept Chem & Biol Engn, SE-41296 Gothenburg, Sweden

[2] DLR, Inst Mat Res, D-51147 Cologne, Germany

[3] Univ Cardiff, NEDO Ctr Thermoelect Engn, Cardiff CF24 3TF, Wales

[4] Univ Calif Santa Barbara, Dept Chem & Biochem 9510, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 02期

关键词：

D O I：

10.1063/1.2163979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Czochralski method was used to grow a 46-mm-long crystal of the Ba8Ga16Ge30 clathrate, which was cut into disks that were evaluated for thermoelectric performance. The Seebeck coefficient and electrical and thermal conductivities all showed evidence of a transition from extrinsic to intrinsic behavior in the range of 600-900 K. The corresponding figure of merit (ZT) was found to be a record high of 1.35 at 900 K and with an extrapolated maximum of 1.63 at 1100 K. This makes the Ba8Ga16Ge30 clathrate an exceptionally strong candidate for medium and high-temperature thermoelectric applications. (c) 2006 American Institute of Physics.

引用

页数：5

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