A HfO2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT Technology

被引：0

作者：

Fontsere, A. ^{[1
,2
]}

Perez-Tomas, A. ^{[1
]}

Banu, V. ^{[1
]}

Godignon, P. ^{[1
]}

Millan, J. ^{[1
]}

De Vleeschouwer, H. ^{[3
]}

Parsey, J. M. ^{[4
]}

Moens, P. ^{[3
]}

机构：

[1] IMB CNM CSIC, Campus UAB, Barcelona 08193, Catalunya, Spain

[2] Univ Politecn Cataluna, Dept Elect Engn, Barcelona 08034, Spain

[3] ON Semicond, Power Technol Ctr, B-9700 Oudenaarde, Belgium

[4] ON Semicond, Phoenix, AZ 85008 USA

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

AlGaN/GaN; HEMTs; High Voltage; High Temperature; MIS; HfO2; Dynamic I-V;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Innovative 800V/300 degrees C AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) fabricated with a 4-inch Si CMOS compatible technology are presented in this paper. High performance AlGaN/GaN MIS gated HEMT (MIS-HEMT) and passivated HEMT (i-HEMT) were fabricated using 5nm-thick HfO2, and 30nm-thick CVD Si3N4 as the gate and passivation insulator, respectively. Contact resistance maps yield reduced R-c of 1.32 +/- 0.26 Omega mm for Au-free compared to 0.86 +/- 0.58 Omega mm for conventional Au-based Ohmic metallization. The off-state breakdown voltage is around 800V with a specific on-resistance of 2 m Omega cm(2). Gate and drain leakage currents as well as dynamic I-V trapping are significantly improved with the MIS-HEMT architecture with almost no trade-off to the on-state.

引用

页码：37 / 40

页数：4

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