Strong interband transitions in InAs quantum dots solar cell

被引：38

作者：

Wu, Jiang ^{[1
]}

Makableh, Y. F. M. ^{[1
]}

Vasan, R. ^{[1
]}

Manasreh, M. O. ^{[1
]}

Liang, B. ^{[2
]}

Reyner, C. J. ^{[2
]}

Huffaker, D. L. ^{[2
]}

机构：

[1] Univ Arkansas, Dept Elect Engn, Bell Engn Ctr 3217, Fayetteville, AR 72701 USA

[2] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

关键词：

ENHANCEMENT; EFFICIENCY;

D O I：

10.1063/1.3681360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solar cells fabricated from a stack of ten periods of InAs quantum dots sandwiched in a GaAs p-n junction were fabricated and tested. The 300 K photoresponse spectrum exhibits two strong peaks and several weak peaks related to band-to-band transitions within the quantum dots. A few of these peaks were also observed in the photoluminescence and external quantum efficiency spectra. The power conversion efficiency was obtained from the current-voltage characteristics. Surface plasmon effect on the solar cell was investigated by coupling gold nanoparticles to the surface of the device using dithiol ligands with an enhancement on the order of 10%. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3681360]

引用

页数：4

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