Nonlinear optical devices based on a transparency in semiconductor intersubband transitions

被引:112
作者
Schmidt, H
Imamoglu, A
机构
[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara
关键词
nonlinear optics; semiconductor intersubband transitions; Fano interference;
D O I
10.1016/0030-4018(96)00354-9
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We propose nonlinear optical devices for the near and mid infrared range that use an absorption transparency along with a resonantly enhanced second order susceptibility for efficient frequency conversion or parametric amplification, The susceptibilities have been calculated for an asymmetric GaAs/AlGaAs double quantum well structure that utilizes coherent resonant tunneling to create Fano-type interferences. Our calculations show that nonlinear susceptibilities of the order of chi((2)) = 10(-7) m/V are feasible at the transparency frequency of a singly resonant transition at 5 mu m. Second harmonic conversion efficiency and parametric gain depend on the ratio of coupling strength to the dephasing rare and can be tuned by changing the width of the tunneling barrier.
引用
收藏
页码:333 / 338
页数:6
相关论文
共 20 条
[1]   2ND-HARMONIC GENERATION IN ABSORPTIVE MEDIA [J].
ALMOGY, G ;
YARIV, A .
OPTICS LETTERS, 1994, 19 (22) :1828-1830
[2]  
Boyd R. W., 2019, Nonlinear Optics, V4th
[3]  
CAMPMAN KL, UNPUB
[4]   HIGH CONVERSION EFFICIENCY OF 2ND-HARMONIC GENERATION IN STEP QUANTUM-WELLS [J].
CHEN, ZH ;
CUI, DF ;
LI, MH ;
JIANG, C ;
ZHOU, JM ;
YANG, GZ .
APPLIED PHYSICS LETTERS, 1992, 61 (20) :2401-2402
[5]   TUNABLE MIDINFRARED GENERATION BY DIFFERENCE-FREQUENCY MIXING OF DIODE-LASER WAVELENGTHS IN INTERSUBBAND INGAAS/ALAS QUANTUM-WELLS [J].
CHUI, HC ;
WOODS, GL ;
FEJER, MM ;
MARTINET, EL ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1995, 66 (03) :265-267
[6]  
COHENTANNOUDJI C, 1992, ATOM PHOTO INTERACTI
[7]  
FAIST J, 1995, PREPRINT
[8]   EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS [J].
FANO, U .
PHYSICAL REVIEW, 1961, 124 (06) :1866-&
[9]   OBSERVATION OF EXTREMELY LARGE QUADRATIC SUSCEPTIBILITY AT 9.6-10.8-MU-M IN ELECTRIC-FIELD-BIASED ALGAAS QUANTUM WELLS [J].
FEJER, MM ;
YOO, SJB ;
BYER, RL ;
HARWIT, A ;
HARRIS, JS .
PHYSICAL REVIEW LETTERS, 1989, 62 (09) :1041-1044
[10]   EVALUATION OF SOME SCATTERING TIMES FOR ELECTRONS IN UNBIASED AND BIASED SINGLE-QUANTUM-WELL AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].
FERREIRA, R ;
BASTARD, G .
PHYSICAL REVIEW B, 1989, 40 (02) :1074-1086