Magnetic anisotropy in Fe films epitaxied by thermal deposition and pulse laser deposition on GaAs(001)

被引：8
作者：
Xiao, X. [1 ]
Liang, J. H.
Huo, Y.
Zhu, J.
Chen, G.
Wu, Y. Z.
机构：
[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 17期
关键词：
D O I：
10.1063/1.4798819
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The in-plane magnetic anisotropy of Fe films fabricated with thermal deposition (TD) and pulse laser deposition (PLD) techniques on GaAs(001) substrate was studied quantitatively. The volume anisotropy in TD Fe film is attributed to the constant strain anisotropy, supported by reflection high-energy electron diffraction analysis. The PLD growth was found to deeply influence the interface anisotropy at Fe/GaAs interface even through a 30 ML Fe TD underlayer. The volume anisotropy was found to exist in TD Fe film even grown on top of a PLD film. Our study indicates that the uniaxial magnetic anisotropy in Fe/GaAs(001) system can be controlled by a combination of TD and PLD growth. (C) 2013 American Institute of Physics.
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