Growth, real structure and applications of GaSel1-xSx crystals

被引：57

作者：

Andreev, YM

Atuchin, VV ^{[1
]}

Lanskii, GV

Morozov, AN

Pokrovsky, LD

Sarkisov, SY

Voevodina, OV

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Inst Monitoring Climat & Ecol Syst, Lab Ecol Instrument Making, Tomsk 634055, Russia

[3] Siberian Physico Tech Inst, Semicond Mat Sci Lab, Tomsk 634050, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 128卷 / 1-3期

基金：

俄罗斯基础研究基金会;

关键词：

crystal growth; GaSe; doping; defect structure; cleaving;

D O I：

10.1016/j.mseb.2005.12.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Real defect structure, growing technology and physical properties of doped GaSe:S crystals are presented. From comparative experiment on CO2 laser SHG at identical experimental conditions 1.45 times advantages of GaSe:S (2 wt%) in relation to pure and GaSe:In (0.1 wt%) crystals are developed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：205 / 210

页数：6

共 26 条

[1] Photoluminescence of rare-earth-doped InSe and GaSe single crystals [J].