Effects of metal electrodes on the resistive memory switching property of NiO thin films

被引：177

作者：

Lee, C. B. ^{[1
]}

Kang, B. S. ^{[1
]}

Benayad, A. ^{[1
]}

Lee, M. J. ^{[1
]}

Ahn, S. -E. ^{[1
]}

Kim, K. H. ^{[1
]}

Stefanovich, G. ^{[1
]}

Park, Y. ^{[1
]}

Yoo, I. K. ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Gyeonggi Do 446712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

Interfaces (materials) - Ohmic contacts - Oxide films - Electrodes - Free energy - Switching - Nickel oxide - Thin films;

D O I：

10.1063/1.2967194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p-type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface. (C) 2008 American Institute of Physics.

引用

页数：3

共 12 条

[1] Random circuit breaker network model for unipolar resistance switching [J].

Chae, Seung Chul ;

Lee, Jae Sung ;

Kim, Sejin ;

Lee, Shin Buhm ;

Chang, Seo Hyoung ;

Liu, Chunli ;

Kahng, Byungnam ;

Shin, Hyunjung ;

Kim, Dong-Wook ;

Jung, Chang Uk ;

Seo, Sunae ;

Lee, Myoung-Jae ;

Noh, Tae Won .

ADVANCED MATERIALS, 2008, 20 (06) :1154-+

[2] Decrease in switching voltage fluctuation of Pt/NiOx/Pt structure by process control [J].

Jung, Ranju ;

Lee, Myoung-Jae ;

Seo, Sunae ;

Kim, Dong Chirl ;

Park, Gyeong-Su ;

Kim, Kihong ;

Ahn, Seungeon ;

Park, Youngsoo ;

Yoo, In-Kyeong ;

Kim, Jin-Soo ;

Park, Bae Ho .

APPLIED PHYSICS LETTERS, 2007, 91 (02)

[3] Improvement of resistive memory switching in NiO using IrO2 [J].

Kim, D. C. ;

Lee, M. J. ;

Ahn, S. E. ;

Seo, S. ;

Park, J. C. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[4] Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films [J].

Kim, Kyung Min ;

Choi, Byung Joon ;

Shin, Yong Cheol ;

Choi, Seol ;

Hwang, Cheol Seong .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[5] Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide [J].

Kinoshita, K. ;

Tamura, T. ;

Aoki, M. ;

Sugiyama, Y. ;

Tanaka, H. .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[6]

LEE HG, 1999, THERMODYNAMICS METAL, P127

[7] A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories [J].

Lee, Myoung-Jae ;

Seo, Sunae ;

Kim, Dong-Chirl ;

Ahn, Seung-Eon ;

Seo, David H. ;

Yoo, In-Kyeong ;

Baek, In-Gyu ;

Kim, Dong-Sik ;

Byun, Ik-Su ;

Kim, Soo-Hong ;

Hwang, In-Rok ;

Kim, Jin-Soo ;

Jeon, Sang-Ho ;

Park, Bae Ho .

ADVANCED MATERIALS, 2007, 19 (01) :73-+

[8] Resistive memory switching in epitaxially grown NiO [J].

Lee, S. R. ;

Char, K. ;

Kim, D. C. ;

Jung, R. ;

Seo, S. ;

Li, X. S. ;

Park, G. -S. ;

Yoo, I. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (20)

[9]

LIDE DR, 2003, HDB CHEM PHYS, V12, P108

[10]

SAMSONOV GV, 1982, OXIDE HDB, P44

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