Defect studies on fast and thermal neutron irradiated GaN

被引：23

作者：

Lorenz, K. ^{[1
,2
]}

Marques, J. G. ^{[1
,2
]}

Franco, N. ^{[1
]}

Alves, E. ^{[1
,2
]}

Peres, M. ^{[3
]}

Correia, M. R. ^{[3
]}

Monteiro, T. ^{[3
]}

机构：

[1] ITN, P-2686953 Sacavem, Portugal

[2] CFNUL, P-1649003 Lisbon, Portugal

[3] Univ Aveiro, P-3810193 Aveiro, Portugal

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 12-13期

关键词：

GaN; neutron irradiation; defects; photoluminescence;

D O I：

10.1016/j.nimb.2008.03.116

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Single crystalline epitaxial GaN films were irradiated with fast (E > 1 MeV) or with fast and thermal neutrons. These irradiation conditions allow the separation of the effect of transmutational doping with Ge due to nuclear reactions with thermal neutrons on the damage production. High resolution X-ray diffraction showed an expansion of the c-lattice parameter after irradiation which is reversed after annealing at 1000 degrees C. The effect of neutron irradiation on the optical properties of GaN samples was investigated using photoluminescence and Raman spectroscopies. With above band gap excitation the PL spectra of the as-irradiated sample with fast and thermal neutrons is dominated by broad emission bands in the UV and yellow spectral range whereas no PL is observed for the fast neutron as-irradiated sample. Annealing the as-irradiated samples promotes the damage recovery and noticed changes are observed in the PL spectra. Raman scattering spectra indicate an increase of the intensity of the disorder activated phonons revealing higher lattice damage for the irradiation with fast and thermal neutrons. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2780 / 2783

页数：4

共 14 条

[1] Phonon dispersion and Raman scattering in hexagonal GaN and AlN [J].