Increase of Boron Ion Beam Current Extracted from a Multi-Cusp Ion Source in an Ion Doping System with Mass Separation

被引：0

作者：

Inouchi, Yutaka ^{[1
]}

Dohi, Shojiro ^{[1
]}

Tanii, Masahiro ^{[1
]}

Tatemichi, Junichi ^{[1
]}

Konishi, Masashi ^{[1
]}

Nukayama, Masaaki ^{[1
]}

Nakao, Kazuhiro ^{[1
]}

Orihira, Koichi ^{[1
]}

Naito, Masao ^{[1
]}

机构：

[1] Nissin Ion Equipment Co Ltd, Shiga 5280068, Japan

来源：

ION IMPLANTATION TECHNOLOGY 2008 | 2008年 / 1066卷

关键词：

Ion Source; Multi-cusp; Ion implanter; Ion doping; Boron trifluoride; Langmuir probe; Flat-panel-display; Ribbon beam; long pole gap;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multi-cusp ion source with large area extraction area has a capacity to extract high current ion beams. However it is difficult to obtain high current boron ion beams from boron trifluoride plasma as input power density is low and BF(2)(+) is a main ion species. It was found that fluoride ion currents were selectively decreased by applying positive potential to a plasma electrode with respect to a plasma chamber. Using this method to a multi-cusp ion source with adequate magnet configuration, high current boron ion beams of 500 mu A/cm were obtained.

引用

页码：316 / 319

页数：4