Barrier heights engineering of Al/p-Si Schottky contact by a thin organic interlayer

被引：39

作者：

Huang, Wen Chang ^{[1
]}

Lin, Tien-Chai ^{[2
]}

Horng, Chia-Tsung ^{[1
]}

Chen, Chien-Chou ^{[1
]}

机构：

[1] Kun Shan Univ, Dept Electroopt Engn, Tainan 71003, Taiwan

[2] Kun Shan Univ, Dept Elect Engn, Tainan 71003, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 107卷

关键词：

Schottky diode; Barrier height; Ideality factor; Alq(3); CURRENT-VOLTAGE CHARACTERISTICS; HIGH SERIES RESISTANCE; LIGHT-EMITTING-DIODES; ELECTRICAL CHARACTERISTICS; INTERFACIAL LAYER; SI/AL STRUCTURE; IV PLOT; HETEROJUNCTIONS; DEPOSITION;

D O I：

10.1016/j.mee.2012.09.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage (I-V) characteristics of the Al/Alq(3)/p-Si Schottky diode shows rectified behavior with a potential barrier formed at the contact interface. The barrier height and the ideality factor values are 0.78 eV and 1.53, respectively. The barrier height of the Al/Alq(3)/p-Si diode is larger than that (similar to 0.58 eV) of the conventional Al/p-Si diode. It reveals that the organic film, Alq(3), controls the carrier transport of the diode at the contact interface. A linear relationship of 1/C-2 vs. V plot under the reverse bias is shown and the effective barrier height is 0.69 eV by capacitance-voltage (C-V) measurement. The electrical characteristics of the diode are also discussed by using Norde's function and Cheung's method. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：200 / 204

页数：5

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