Hybrid integrated InP-Si3N4 diode laser with a 40-Hz intrinsic linewidth

被引:127
作者
Fan, Youwen [1 ]
van Rees, Albert [1 ]
Van der Slot, Peter J. M. [1 ]
Mak, Jesse [1 ]
Oldenbeuving, Ruud M. [2 ]
Hoekman, Marcel [2 ]
Geskus, Dimitri [2 ]
Roeloffzen, Chris G. H. [2 ]
Boller, Klaus-J [1 ]
机构
[1] Univ Twente, Dept Sci & Technol, Mesa Inst Nanotechnol, Laser Phys & Nonlinear Opt, Enschede, Netherlands
[2] LioniX Int BV, Enschede, Netherlands
基金
欧盟地平线“2020”;
关键词
SEMICONDUCTOR-LASER; NOISE; REDUCTION; FEEDBACK; CHIRP;
D O I
10.1364/OE.398906
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 mu m wavelength range with 3 mW output and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:21713 / 21728
页数:16
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