Performance Analysis of Graphene Nanoribbon Field Effect Transistors in the Presence of Surface Roughness

被引：25

作者：

Sanaeepur, Majid ^{[1
]}

Goharrizi, Arash Yazdanpanah ^{[1
]}

Sharifi, Mohammad Javad ^{[1
]}

机构：

[1] Shahid Beheshti Univ, Dept Elect & Comp Engn, Tehran 19834, Iran

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 04期

关键词：

Device performance; graphene field effect transistors; NEGF; quantum transport; subthreshold swing; surface roughness; transconductance; ATOMISTIC SIMULATION; NEMO; 3-D; LOCALIZATION; TRANSPORT; CMOS; FETS;

D O I：

10.1109/TED.2013.2290049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Device performance of armchair graphene nanoribbon field effect transistors in the presence of surface roughness scattering is studied. A 2-D Gaussian autocorrelation function is employed to model the surface roughness. Tight-binding Hamiltonian and nonequilibrium Green's function formalism are used to perform atomic scale electronic transport simulation. The effect of geometrical and surface roughness parameters on the ON-current, the OFF-current, the transconductance, and the subthreshold swing is investigated. Surface roughness can strongly affect the device performance depending on how large is the roughness amplitude or how small is the roughness correlation length.

引用

页码：1193 / 1198

页数：6

共 43 条

[1] Multidimensional modeling of nanotransistors [J].