Modeling of γ-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors

被引：4
作者：
Golubovic, S
Djoric-Veljkovic, S
Davidovic, V
Stojadinovic, N
机构：
[1] Univ Nish, Fac Elect Engn, YU-18000 Nish, Yugoslavia
[2] Univ Nis, Fac Technol, YU-16000 Leskovac, Yugoslavia
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 08期
关键词：
gamma-irradiation effects; lowered temperature effects; power VDMOS transistors; interface traps; gate-oxide charge;
D O I：
10.1143/JJAP.38.4699
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper the results of investigation of gamma-irradiation and lowered temperature effects on commercial n-channel power vertical double-diffused metal-oxide-semiconductor (VDMOS) transistors are presented. By analyzing obtained results, the mechanisms responsible for observed effects are modeled.
引用
收藏
页码：4699 / 4702
页数：4
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