Enhancement of activation energies of sharp photoluminescence lines for GaInNAs quantum wells due to quantum confinement

被引：6

作者：

Latkowska, M. ^{[1
]}

Kudrawiec, R. ^{[1
]}

Misiewicz, J. ^{[1
]}

Galvao Gobato, Y. ^{[2
]}

Henini, M. ^{[3
]}

Hopkinson, M. ^{[4
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

[3] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 40期

基金：

巴西圣保罗研究基金会;

关键词：

PHOTOREFLECTANCE EVIDENCE;

D O I：

10.1088/0022-3727/46/40/402001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that localized emission from GaInNAs quantum wells (QW) is composed of sharp photoluminescence (PL) lines. Spectral position of these PL lines varies in a very broad range (similar to 150 meV) but the activation energy of each line is the same within the experimental uncertainty and equals similar to 11 meV. This value is higher than in bulk GaInNAs (similar to 6 meV) and corresponds very well to electron-hole attraction in GaInNAs QW. It means that the source of these sharp PL lines are excitons localized on deep centres, which can recombine radiatively while the thermal energy is smaller than the Coulomb attraction between electrons and holes. Because of this the localized emission composing of sharp PL lines is observed at low temperatures and quenched much faster for GaInNAs layers than GaInNAs/GaAs QWs.

引用

页数：5

共 50 条

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