Application of α-C:H films to masking etching of silicon dioxide

被引：4
|
作者：
Fissore, A
Alves, MAR
Braga, ED
Cescato, L
机构：
[1] State Univ Campinas, Fac Elect & Comp Engn, BR-13081970 Campinas, SP, Brazil
[2] State Univ Campinas, Inst Phys Gleb Wataghin, Campinas, SP, Brazil
来源：
MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 09期
基金：
巴西圣保罗研究基金会;
关键词：
hydrogenated carbon; fluoridric acid; silicon dioxide;
D O I：
10.1016/S0026-2692(99)00018-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous hydrogenated carbon (alpha-C:H) thin films deposited by rf chemical vapor deposition were applied to masking the etching of silicon dioxide (SiO2) by the aqueous solution of fluoridric acid (HF). Films with thickness of approximately 100 nm were successfully patterned on SiO2 by the lift-off process. Then the masked samples were submitted to an aqueous HF solution at room temperature. The inspection showed well-defined etching pattern indicating the high performance of the alpha-C:H for this application. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：833 / 836
页数：4
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