HIGH PERFORMANCE AND HIGHLY UNIFORM METAL HI-K GATE-ALL-AROUND SILICON NANOWIRE MOSFETS

被引：1

作者：

Sleight, J. ^{[1
]}

Bangsaruntip, S. ^{[1
]}

Cohen, G. ^{[1
]}

Majumdar, A. ^{[1
]}

Zhang, Y. ^{[1
]}

Engelmann, S. ^{[1
]}

Fuller, N. ^{[1
]}

Gignac, L. ^{[1
]}

Mittal, S. ^{[1
]}

Newbury, J. ^{[1
]}

Barwicz, T. ^{[1
]}

Frank, M. ^{[1
]}

Guillorn, M. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2010年 / 28卷 / 01期

关键词：

D O I：

10.1149/1.3375600

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I-DSAT = 825/950 mu A/mu m (circumference-normalized) or 2592/2985 mu A/mu m (diameter-normalized) at supply voltage V-DD = 1 V and off-current I-OFF = 15 nA/mu m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.

引用

页码：179 / 189

页数：11

共 11 条

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