Characteristics of SrS:Cu thin-film electroluminescent device fabricated by pulsed-laser deposition

被引：6

作者：

Choe, JY ^{[1
]}

Blomquist, SM ^{[1
]}

Morton, DC ^{[1
]}

机构：

[1] USA, Electroopt & Photon Div, SEDD, Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 22期

关键词：

D O I：

10.1063/1.1483925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrS:Cu film was deposited by a pulsed-laser deposition method to fabricate the phosphor film for thin-film electroluminescent (EL) devices. The devices were annealed in dry nitrogen gas to give the characteristic blue emission with a chromaticity coordinate of (0.17, 0.24). The luminance at 100 Hz driving frequency reached 6 cd/cm(2) with corresponding transferred charge of 4.1 muC/cm(2). The excellent stoichiometry replication of the film from the target being sputtered, pulsed-laser deposition can serve as a convenient method for fabricating high-quality thin-film EL devices of different composition by changing target concentrations. (C) 2002 American Institute of Physics.

引用

页码：4124 / 4126

页数：3

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